BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 10

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1998 Oct 21
handbook, halfpage
handbook, halfpage
NPN wideband transistor
Fig.16 Input impedance as function of frequency
Pulsed, class-AB operation;  < 1 ; 2; t
f = 2 GHz; V
V
CE
(dB)
Fig.14 Power gain and collector efficiency as a
G p
(Ω)
Z i
= 3.6 V; I
16
12
10
8
4
0
8
6
4
2
0
1.8
10
(series components); typical values.
CE
function of load power; typical values.
CQ
= 2.4 V; I
= 1 mA; P
1.85
14
η C
CQ
L
= 1 mA; tuned at P
= 100 mW; T
x i
r i
1.9
18
G p
p
= 5 ms.
s
 60 C.
1.95
22
L
= 100 mW.
P L (dBm)
f (GHz)
MGR635
MGR637
26
2
80
60
40
20
0
(%)
η C
10
handbook, halfpage
handbook, halfpage
Fig.17 Load impedance as a function of frequency
Pulsed, class-AB operation;  < 1 ; 2; t
f = 2 GHz; V
V
CE
Fig.15 Power gain and collector efficiency as a
(dB)
(Ω)
G p
Z L
= 3.6 V; I
30
20
10
16
12
0
8
4
0
1.8
10
(series components); typical values.
CE
function of load power; typical values.
CQ
= 3.6 V; I
= 1 mA; P
1.85
14
CQ
L
= 1 mA; tuned at P
= 100 mW; T
1.9
18
η C
R L
X L
p
= 5 ms.
s
 60 C.
Product specification
1.95
22
L
BFG480W
= 100 mW.
G p
P L (dBm)
f (GHz)
MGR638
MGR636
26
2
80
60
40
20
0
(%)
η C