BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 2

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
FEATURES
 High power gain
 High efficiency
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance
 Linear and non-linear operation.
APPLICATIONS
 RF front end with high linearity system demands
 Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
QUICK REFERENCE DATA
1998 Oct 21
V
I
P
f
G
F
G

SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
C
T
(CDMA)
C
CEO
tot
NPN wideband transistor
max
p
collector-emitter voltage open base
collector current (DC)
total power dissipation
transition frequency
maximum gain
noise figure
power gain
collector efficiency
PARAMETER
T
I
I
I
Pulsed; class-AB;  < 1 : 2; t
V
Pulsed; class-AB;  < 1 : 2; t
V
C
C
C
s
CE
CE
= 80 mA; V
= 80 mA; V
= 8 mA; V
 60 C
= 3.6 V; f = 2 GHz; P
= 3.6 V; f = 2 GHz; P
CE
CE
CE
= 2 V; f = 2 GHz; 
CAUTION
CONDITIONS
= 2 V; f = 2 GHz; T
= 2 V; f = 2 GHz; T
2
PINNING
handbook, halfpage
L
L
Marking code: P6.
= 100 mW
= 100 mW
p
p
PIN
= 5 ms;
= 5 ms;
1
2
3
4
Fig.1 Simplified outline SOT343R.
S
amb
amb
= 
opt
= 25 C 21
= 25 C 16
emitter
base
emitter
collector
3
2
Top view

80

1.8
13.5
45
TYP.
DESCRIPTION
MSB842
4
1
Product specification
4.5
250
360





BFG480W
MAX.
V
mA
mW
GHz
dB
dB
dB
%
UNIT