IXXH50N60C3D1 IXYS, IXXH50N60C3D1 Datasheet - Page 7

• Manufacturer Part Number: IXXH50N60C3D1
• Description: IGBT 600V 100A 600W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH50N60C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 36A
• Current - Collector (ic) (max): 100A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 100
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.3
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 42
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.48
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 22. Forward Current I
Fig. 25. Dynamic Parameters Q
Z
Fig. 28. Transient Thermal Resistance Junction to Case
© 2010 IXYS CORPORATION, All Rights Reserved
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
Versus T
VJ
=150°C
=100°C
40
I
1
RM
VJ
0.0001
Q
80
r
2
T
F
VJ
V
T
Versus V
120
VJ
F
= 25°C
r
, I
3
°C
0.001
RM
V
160
F
t
Q
rr
1000
r
800
600
400
200
Fig. 26. Recovery Time t
nC
Fig. 23. Reverse Recovery Charge Q
Versus -di
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
-di
F
/dt
F
I
I
I
/dt
F
F
F
= 60A
= 30A
= 15A
I
I
I
400
F
F
F
= 60A
= 30A
= 15A
0.1
T
V
-di
VJ
R
600
F
-di
= 100°C
/dt
= 300V
t
F
rr
/dt
A/μs
Versus
s
800
A/μs
DSEP 29-06
1000
1000
1
r
I
V
RM
FR
30
25
20
15
10
20
15
10
A
V
5
0
5
0
Fig. 27. Peak Forward Voltage V
Constants for Z
Fig. 24. Peak Reverse Current I
0
0
1
2
3
i
T
V
VJ
IXXH50N60C3D1
R
200
200
= 100°C
= 300V
t
fr
and t
Versus -di
T
I
F
VJ
I
I
I
F
F
F
400
400
R
0.502
0.193
0.205
= 30A
= 100°C
= 60A
= 30A
= 15A
fr
thi
V
Versus di
thJC
FR
(K/W)
600
600
calculation:
F
di
-di
/dt
F
/dt
F
/dt
IXYS REF: IXX_50N60C3(5D)5-20-10
F
A/μs
A/μs
800
800
/dt
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
μs
t
fr