IXXH50N60C3D1 IXYS, IXXH50N60C3D1 Datasheet - Page 5

• Manufacturer Part Number: IXXH50N60C3D1
• Description: IGBT 600V 100A 600W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH50N60C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 36A
• Current - Collector (ic) (max): 100A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 100
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.3
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 42
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.48
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
160
140
120
100
1.2
1.0
0.8
0.6
0.4
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
0
18
25
5
E
T
V
Fig. 17. Inductive Turn-off Switching Times vs.
J
off
CE
E
R
V
Fig. 13. Inductive Switching Energy Loss vs.
Fig. 15. Inductive Switching Energy Loss vs.
= 150ºC , V
off
CE
G
I
10
22
C
= 360V
= 5
= 360V
= 54A
I
C
Ω ,
= 36A
50
15
26
V
GE
GE
E
E
on
= 15V
on
= 15V
T
Junction Temperature
- - - -
J
- - - -
20
30
- Degrees Centigrade
Collector Current
Gate Resistance
T
J
T
R
75
= 150ºC
J
I
G
C
= 25ºC
25
34
- Amperes
- Ohms
30
38
R
V
t
100
f i
CE
G
= 5
I
= 360V
C
I
35
42
C
Ω
= 36A
= 54A
, V
GE
40
46
t
= 15V
125
d(off)
- - - -
45
50
50
150
54
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
120
110
100
90
80
70
60
50
40
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
120
110
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
120
110
100
90
80
70
60
50
40
30
20
90
80
70
60
50
25
18
5
R
V
Fig. 16. Inductive Turn-off Switching Times vs.
t
E
R
V
Fig. 18. Inductive Turn-off Switching Times vs.
f i
G
CE
off
CE
G
T
V
Fig. 14. Inductive Switching Energy Loss vs.
t
22
= 5
= 5
f i
J
10
CE
= 360V
= 360V
= 150ºC,
Ω
Ω ,
= 360V
, V
50
26
V
15
GE
GE
t
V
d(on)
= 15V
E
= 15V
GE
on
t
d(off)
Junction Temperature
= 15V
30
T
- - - -
20
- - - -
J
Collector Current
Gate Resistance
- - - -
- Degrees Centigrade
I
C
75
- Amperes
R
34
25
I
G
C
I
- Ohms
IXXH50N60C3D1
= 36A
I
C
C
= 54A
= 36A
38
30
100
I
T
C
J
= 54A
= 150ºC
42
35
40
46
125
T
J
45
50
= 25ºC
50
150
54
350
300
250
200
150
100
50
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
85
80
75
70
65
60
55
50
45
40