IXXH50N60C3D1 IXYS, IXXH50N60C3D1 Datasheet - Page 3

• Manufacturer Part Number: IXXH50N60C3D1
• Description: IGBT 600V 100A 600W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH50N60C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 36A
• Current - Collector (ic) (max): 100A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 100
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.3
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 42
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.48
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
55
50
45
40
35
30
25
20
15
10
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0
8
0
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
9
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
18A
1
10
Gate-to-Emitter Voltage
1
1.5
36A
V
V
11
CE
V
CE
GE
- Volts
- Volts
1.5
2
- Volts
V
I
GE
C
12
V
= 54A
= 15V
GE
2.5
14V
13V
= 15V
14V
13V
2
13
J
J
3
= 150ºC
= 25ºC
T
2.5
J
14
= 25ºC
3.5
11V
12V
10V
8V
6V
12V
11V
10V
9V
8V
6V
9V
15
4
3
160
140
120
100
100
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
5
= 15V
5
6
0
Fig. 4. Dependence of V
Fig. 6. Input Admittance
10
Junction Temperature
25
7
T
J
- Degrees Centigrade
IXXH50N60C3D1
V
T
CE
J
50
V
8
= 150ºC
GE
15
- Volts
25ºC
- Volts
I
C
75
9
= 54A
I
C
V
I
GE
20
= 36A
C
= 18A
CE(sat)
100
= 15V
10
14V
- 40ºC
13V
on
125
11
25
12V
J
= 25ºC
11V
150
12
10V
30
9V
7V
175
13