IXXH50N60C3D1 IXYS, IXXH50N60C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXXH50N60C3D1
• Description: IGBT 600V 100A 600W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH50N60C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 36A
• Current - Collector (ic) (max): 100A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 100
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.3
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 42
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.48
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
32
28
24
20
16
12
10
10
1
8
4
0
1
0
0
f
V
T
T
Single Pulse
J
C
= 1 MHz
CE(sat)
10
= 175ºC
= 25ºC
5
Fig. 11. Forward-Bias Safe Operating Area
Limit
20
10
Fig. 7. Transconductance
30
T
10
J
Fig. 9. Capacitance
= - 40ºC, 25ºC, 150ºC
15
40
V
DS
I
V
C
CE
- Amperes
- Volts
- Volts
50
20
60
25
100
C res
C ies
C oes
70
30
80
35
DC
90
25µs
100µs
1ms
10ms
1000
100
40
0.01
0.1
0.4
16
14
12
10
110
100
0.00001
1
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
0
100
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
J
C
G
G
CE
= 150ºC
= 36A
= 10mA
= 5
= 300V
10
Ω
Fig. 10. Reverse-Bias Safe Operating Area
0.0001
200
20
Fig. 8. Gate Charge
Pulse Width - Second
300
Q
0.001
IXXH50N60C3D1
G
- NanoCoulombs
30
V
CE
a a sss
- Volts
400
40
0.01
50
500
0.1
60
600
1
70