BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK662R4-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R4-40C,118

• Input Capacitance (ciss) @ Vds: 11334pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK662R4-40C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
R
(m Ω )
GS(th)
(V)
DSon
12
4
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
3.4
0
100
3.6
max @1mA
min @2.5mA
typ @1mA
60
3.8
200
V
GS
120
(V) = 4.0
All information provided in this document is subject to legal disclaimers.
I
003aae542
T
003aae704
4.5
5.0
10.0
D
j
(A)
(°C)
300
Rev. 2 — 2 November 2010
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
2.5
1.5
0.5
-1
-2
-3
-4
-5
-6
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
1
0
BUK662R4-40C
min
N-channel TrenchMOS FET
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
003aad793
T
GS
j
(°C)
(V)
180
4
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