BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet

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BUK662R4-40C,118

Manufacturer Part Number
BUK662R4-40C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK662R4-40C118.pdf (14 pages)

Specifications of BUK662R4-40C,118

Input Capacitance (ciss) @ Vds
11334pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
199nC @ 10V
Power - Max
263W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK662R4-40C
N-channel TrenchMOS FET
Rev. 2 — 2 November 2010
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control.
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
1.9
Max Unit
40
120
263
2.3
V
A
W
mΩ

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BUK662R4-40C,118 Summary of contents

Page 1

... BUK662R4-40C N-channel TrenchMOS FET Rev. 2 — 2 November 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET Min Max - 40 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 914 - ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK662R4-40C Product data sheet 003aac798 150 200 ( ° Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature (V) ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK662R4-40C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET Min Typ Max - - 0.57 003aae587 t p δ = ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET Min Typ Max Unit 1.8 2.3 2.8 ...

Page 7

... V (V) DS Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET Min Typ Max - 0.8 1 104 - 003aae597 = 175 ° °C ...

Page 8

... Fig 10. Sub-threshold drain current as a function of 003aae704 a V (V) = 4.0 GS 4.5 5.0 10.0 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET -1 -2 min typ max - gate-source voltage 2 ...

Page 9

... Fig 14. Gate-source voltage as a function of turn-on 003a a e 592 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET ( 14V V = 32V 100 gate charge; typical values ...

Page 10

... H D max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK662R4-40C v.2 20101102 • Modifications: Status changed from objective to product. BUK662R4-40C v.1 20100330 BUK662R4-40C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 November 2010 BUK662R4-40C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 November 2010 Document identifier: BUK662R4-40C ...

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