BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK662R4-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R4-40C,118

• Input Capacitance (ciss) @ Vds: 11334pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK662R4-40C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
10
D
D
10
10
10
240
180
120
10
60
-1
4
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
Limit R
100
DSon
= V
150
DS
/ I
All information provided in this document is subject to legal disclaimers.
T
D
003aac798
mb
1
( ° C)
200
Rev. 2 — 2 November 2010
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
BUK662R4-40C
100
N-channel TrenchMOS FET
V
DS
(V)
100 μ s
100 ms
10 ms
150
10 μ s
© NXP B.V. 2010. All rights reserved.
T
003aae575
mb
03na19
(°C)
10
200
2
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