BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet - Page 10

• Manufacturer Part Number: BUK662R4-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R4-40C,118

• Input Capacitance (ciss) @ Vds: 11334pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT404 (D2PAK)
BUK662R4-40C
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 2 — 2 November 2010
10.30
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
L p
A 1
BUK662R4-40C
Q
PROJECTION
c
EUROPEAN
A
N-channel TrenchMOS FET
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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