PSMN7R0-40LS,115 NXP Semiconductors, PSMN7R0-40LS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN7R0-40LS,115
• Description: MOSFET N-CH 40V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-40LS,115

• Input Capacitance (ciss) @ Vds: 1286pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.4nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5595-2

NXP Semiconductors
PSMN5R8-40YS
Product data sheet
Fig 3.
(A)
I
10
D
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
3
2
1
10
-1
Limit R
1
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/ I
Rev. 03 — 25 October 2010
D
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET
10
DC
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
PSMN5R8-40YS
10
2
V
DS
© NXP B.V. 2010. All rights reserved.
(V)
003aae221
10
3
4 of 15