BUK653R7-30C,127 NXP Semiconductors, BUK653R7-30C,127 Datasheet - Page 8

• Manufacturer Part Number: BUK653R7-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK653R7-30C,127

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK653R7-30C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(mΩ)
R
V
DSon
GS(th)
(V)
16
12
4
3
2
1
0
8
4
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
V
GS
(V) = 3.8
25
0
4.0
max
min
typ
60
50
120
75
All information provided in this document is subject to legal disclaimers.
003aae368
003aad805
I
T
4.5
D
j
(A)
(°C)
5.0
6.0
10
100
180
Rev. 3 — 13 October 2010
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
1.5
0.5
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
1
BUK653R7-30C
min
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
T
GS
j
( ° C)
03aa27
(V)
180
4
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