BUK653R7-30C,127 NXP Semiconductors, BUK653R7-30C,127 Datasheet - Page 10

• Manufacturer Part Number: BUK653R7-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK653R7-30C,127

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT78A (TO-220AB)
BUK653R7-30C
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78A
4.5
4.1
A
1.39
1.27
A 1
0.9
0.6
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
All information provided in this document is subject to legal disclaimers.
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
2
e
Rev. 3 — 13 October 2010
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
N-channel TrenchMOS intermediate level FET
L
mounting
base
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
A
A 1
BUK653R7-30C
PROJECTION
3.8
3.6
c
EUROPEAN
p
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
03-01-22
05-03-14
SOT78A
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