BUK653R7-30C,127 NXP Semiconductors, BUK653R7-30C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK653R7-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK653R7-30C,127

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK653R7-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
I
D
D
100
80
60
40
20
80
60
40
20
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
6
1
5
0.5
4.5
T
j
2
= 175 °C
…continued
1
3
T
1.5
V
j
GS
= 25 °C
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
4
003aae307
DS
003aae306
(V) = 3.2
V
= 25 A; V
= 20 A; dI
V
DS
GS
Figure 16
= 25 V
(V)
(V)
3.6
3.4
3.3
4.0
3.8
Rev. 3 — 13 October 2010
2
5
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(mΩ)
R
(S)
g
DSon
125
100
fs
75
50
25
N-channel TrenchMOS intermediate level FET
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values.
Forward transconductance as a function of
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
25
4
BUK653R7-30C
Min
-
-
-
50
8
Typ
0.8
46
57
75
12
© NXP B.V. 2010. All rights reserved.
003aae308
003aae369
V
I
D
GS
Max
1.2
-
-
(A)
(V)
100
16
Unit
V
ns
nC
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