BUK653R7-30C,127 NXP Semiconductors, BUK653R7-30C,127 Datasheet - Page 4

• Manufacturer Part Number: BUK653R7-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK653R7-30C,127

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK653R7-30C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
150
Limit R
All information provided in this document is subject to legal disclaimers.
T
003aae370
mb
1
DSon
(°C)
= V
200
Rev. 3 — 13 October 2010
DS
/ I
D
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
BUK653R7-30C
100
V
DS
10 ms
100 ms
1 ms
t
100 μ s
(V)
p
=10 μ s
150
© NXP B.V. 2010. All rights reserved.
T
003aae371
mb
03na19
(°C)
10
200
2
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