FDB8160_F085 Fairchild Semiconductor, FDB8160_F085 Datasheet - Page 2

• Manufacturer Part Number: FDB8160_F085
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8160_F085

• Input Capacitance (ciss) @ Vds: 11825pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Mounting Style: SMD/SMT
• Fall Time: 27 ns
• Gate Charge Qg: 187 nC
• Rise Time: 18.9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB8160_F085 Rev. C
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
MOSFET Maximum Ratings
Thermal Characteristics
B
I
I
V
r
C
C
C
Rg
Q
Q
Q
Q
Q
V
V
I
E
P
T
R
R
DSS
GSS
Symbol
DS(on)
Symbol
D
VDSS
GS(th)
J
Device Marking
iss
oss
rss
DSS
GS
AS
D
g(TOT)
g(th)
gs
gs2
gd
θJC
θJA
, T
FDB8160
STG
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in
pad area
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
FDB8160_F085
Parameter
Device
o
C
C
T
< 160
J
Parameter
TO-263AB
Package
= 25°C unless otherwise noted
T
C
o
= 25°C unless otherwise noted
C, V
V
f = 1MHz
f = 1MHz
V
V
I
V
I
I
V
V
D
D
D
GS
DS
GS
GS
DS
GS
GS
= 250μA, V
= 80A, V
= 80A, V
= 10V)
= 15V, V
= 0 to 10V
= 0 to 2V
= 24V, V
= V
= ±20V
DS
Test Conditions
2
, I
Reel Size
GS
GS
330mm
D
GS
GS
GS
= 10V
= 10V, T
= 250μA
= 0V
= 0V,
= 0V
V
I
T
D
2
DD
J
J
= 80A
copper
= 150
= 175°C
= 15V
(Note 1)
o
Tape Width
C
24mm
Min
30
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See Figure 4
-55 to +175
Ratings
11825
1810
1240
1.75
0.59
187
1290
Typ
2.9
1.5
2.6
20
43
23
57
±20
254
43
1.7
30
80
-
-
-
-
www.fairchildsemi.com
±100
Quantity
800 units
Max
250
243
1.8
3.1
26
1
-
-
-
-
4
-
-
-
-
Units
o
o
Units
W/
μA
nA
mΩ
mΩ
pF
nC
nC
nC
nC
nC
pF
pF
C/W
C/W
Ω
V
mJ
o
V
W
V
V
A
C
o
C