PSMN5R8-40YS,115 NXP Semiconductors, PSMN5R8-40YS,115 Datasheet - Page 4
![MOSFET N-CH 40V LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN5R8-40YS,115
Manufacturer Part Number
PSMN5R8-40YS,115
Description
MOSFET N-CH 40V LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN5R8-40YS115.pdf
(15 pages)
Specifications of PSMN5R8-40YS,115
Input Capacitance (ciss) @ Vds
1703pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28.8nC @ 10V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.7 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A, 90 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5594-2
NXP Semiconductors
PSMN5R8-40YS
Product data sheet
Fig 3.
(A)
I
10
D
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
3
2
1
10
-1
Limit R
1
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/ I
Rev. 03 — 25 October 2010
D
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET
10
DC
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
PSMN5R8-40YS
10
2
V
DS
© NXP B.V. 2010. All rights reserved.
(V)
003aae221
10
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