PSMN5R8-40YS NXP Semiconductors, PSMN5R8-40YS Datasheet
PSMN5R8-40YS
Specifications of PSMN5R8-40YS
Available stocks
Related parts for PSMN5R8-40YS
PSMN5R8-40YS Summary of contents
Page 1
... PSMN5R8-40YS N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Rev. 03 — 25 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
Page 2
... V GS drain-source avalanche energy unclamped; R Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min = see Figure 14; - Figure °C; - j(init) ≤ sup = 50 Ω ...
Page 3
... I GS j(init) ≤ unclamped sup 003aae220 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° Ω ...
Page 4
... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS 003aae221 =10 μ 100 μ 100 (V) DS © ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min Typ Max - 0.81 1.68 003aae222 δ ...
Page 6
... DS GS see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 0.3 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min Typ Max = -55 ° ° 4 ° 125 ° 100 = 25 ° 100 = 25 ° ...
Page 7
... Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aae225 4000 C (pF) 2000 (A) D Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min Typ = 25 ° 175 ° ...
Page 8
... (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
Page 9
... N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET 003aae228 6 6 100 I (A) D Fig 14. Gate charge waveform definitions 003aae230 V = 32V (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS GS(pl) V GS(th GS1 GS2 G(tot (pF) ...
Page 10
... Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS 003aae231 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
Page 11
... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
Page 12
... N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Supersedes PSMN5R8-40YS v.2 PSMN5R8-40YS v.1 © NXP B.V. 2010. All rights reserved ...
Page 13
... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS © NXP B.V. 2010. All rights reserved ...
Page 14
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Trademarks © NXP B.V. 2010. All rights reserved ...
Page 15
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 October 2010 Document identifier: PSMN5R8-40YS ...