PSMN5R8-40YS,115 NXP Semiconductors, PSMN5R8-40YS,115 Datasheet
PSMN5R8-40YS,115
Specifications of PSMN5R8-40YS,115
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PSMN5R8-40YS,115 Summary of contents
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... PSMN5R8-40YS N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Rev. 03 — 25 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... V GS drain-source avalanche energy unclamped; R Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min = see Figure 14; - Figure °C; - j(init) ≤ sup = 50 Ω ...
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... I GS j(init) ≤ unclamped sup 003aae220 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° Ω ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS 003aae221 =10 μ 100 μ 100 (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min Typ Max - 0.81 1.68 003aae222 δ ...
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... DS GS see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 0.3 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min Typ Max = -55 ° ° 4 ° 125 ° 100 = 25 ° 100 = 25 ° ...
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... Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aae225 4000 C (pF) 2000 (A) D Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Min Typ = 25 ° 175 ° ...
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... (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET 003aae228 6 6 100 I (A) D Fig 14. Gate charge waveform definitions 003aae230 V = 32V (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS GS(pl) V GS(th GS1 GS2 G(tot (pF) ...
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... Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS 003aae231 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Supersedes PSMN5R8-40YS v.2 PSMN5R8-40YS v.1 © NXP B.V. 2010. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 PSMN5R8-40YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 October 2010 Document identifier: PSMN5R8-40YS ...