PSMN5R8-40YS,115 NXP Semiconductors, PSMN5R8-40YS,115 Datasheet - Page 3
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PSMN5R8-40YS,115
Manufacturer Part Number
PSMN5R8-40YS,115
Description
MOSFET N-CH 40V LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN5R8-40YS115.pdf
(15 pages)
Specifications of PSMN5R8-40YS,115
Input Capacitance (ciss) @ Vds
1703pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28.8nC @ 10V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.7 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A, 90 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5594-2
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN5R8-40YS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
100
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aae220
mb
(°C)
Rev. 03 — 25 October 2010
200
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 40 V; unclamped; R
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET
p
p
Fig 2.
≤ 10 µs; T
≤ 10 µs; T
j
j
P
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
(%)
der
120
80
40
= 100 °C; see
= 25 °C; see
0
Figure 2
= 25 °C; I
function of mounting base temperature
Normalized total power dissipation as a
0
mb
mb
= 25 °C;
= 25 °C
GS
GS
D
= 20 kΩ
50
= 90 A;
= 50 Ω
Figure 1
Figure 1
PSMN5R8-40YS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
260
Max
40
40
20
64
90
360
89
90
360
65
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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