A2F500M3G-FGG484 Actel, A2F500M3G-FGG484 Datasheet - Page 36

FPGA - Field Programmable Gate Array 500K System Gates

A2F500M3G-FGG484

Manufacturer Part Number
A2F500M3G-FGG484
Description
FPGA - Field Programmable Gate Array 500K System Gates
Manufacturer
Actel
Datasheet

Specifications of A2F500M3G-FGG484

Processor Series
A2F500
Core
ARM Cortex M3
Number Of Logic Blocks
24
Maximum Operating Frequency
100 MHz
Number Of Programmable I/os
204
Data Ram Size
64 KB
Delay Time
50 ns
Supply Voltage (max)
3.6 V
Supply Current
2 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
0 C
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
A2F-Eval-Kit, A2F-Dev-Kit, FlashPro 3, FlashPro Lite, Silicon-Explorer II, Silicon-Sculptor 3, SI-EX-TCA
Mounting Style
SMD/SMT
Supply Voltage (min)
1.5 V
Number Of Gates
500000
Package / Case
FPBGA-484
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
A2F500M3G-FGG484
Manufacturer:
ACTEL
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Part Number:
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Part Number:
A2F500M3G-FGG484I
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Microsemi SoC
Quantity:
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Part Number:
A2F500M3G-FGG484I
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SmartFusion DC and Switching Characteristics
2- 24
Table 2-20 • Summary of Maximum and Minimum DC Input Levels
Summary of I/O Timing Characteristics – Default I/O Software
Settings
Table 2-21 • Summary of AC Measuring Points Applicable to All I/O Bank Types
Table 2-22 • I/O AC Parameter Definitions
DC I/O Standards
3.3 V LVTTL / 3.3 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
1.5 V LVCMOS
3.3 V PCI
3.3 V PCI-X
Standard
3.3 V LVTTL / 3.3 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
1.5 V LVCMOS
3.3 V PCI
3.3 V PCI-X
LVDS
LVPECL
Parameter
t
t
t
t
t
t
t
t
t
t
t
DP
PY
DOUT
EOUT
DIN
HZ
ZH
LZ
ZL
ZHS
ZLS
Applicable to Commercial Conditions in all I/O Bank Types
Data to pad delay through the output buffer
Pad to data delay through the input buffer
Data to output buffer delay through the I/O interface
Enable to output buffer tristate control delay through the I/O interface
Input buffer to data delay through the I/O interface
Enable to pad delay through the output buffer—High to Z
Enable to pad delay through the output buffer—Z to High
Enable to pad delay through the output buffer—Low to Z
Enable to pad delay through the output buffer—Z to Low
Enable to pad delay through the output buffer with delayed enable—Z to High
Enable to pad delay through the output buffer with delayed enable—Z to Low
R e visio n 6
Parameter Definition
Measuring Trip Point (V
0.285 * VCCxxxxIOBx (RR)
0.285 * VCCxxxxIOBx (RR)
0.615 * VCCxxxxIOBx (FF)
0.615 * VCCxxxxIOBx (FF)
µA
15
15
15
15
15
15
I
IL
Cross point
Cross point
0.90 V
0.75 V
1.4 V
1.2 V
Commercial
trip
)
µA
I
15
15
15
15
15
15
IH

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