VN2410L-G Supertex, VN2410L-G Datasheet - Page 2

MOSFET Small Signal 240V 10Ohm

VN2410L-G

Manufacturer Part Number
VN2410L-G
Description
MOSFET Small Signal 240V 10Ohm
Manufacturer
Supertex
Datasheet

Specifications of VN2410L-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 10 V
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.19 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VN2410L-G
Quantity:
200
Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
OSS
RSS
t
I
t
ISS
SD
D
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
OUTPUT
TO-92
INPUT
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Rise time
Turn-on delay time
Fall time
Turn-off delay time
Diode forward voltage drop
Parameter
10V
V
0V
0V
DD
10%
DS(ON)
t
d(ON)
with temperature
10%
t
(ON)
(continuous)
90%
t
r
(mA)
190
I
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
j
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
90%
t
d(OFF)
O
t
C unless otherwise specified)
(OFF)
(pulsed)
1.7
(A)
I
t
90%
D
f
10%
240
300
Min
Power Dissipation
0.8
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
@T
Typ
1.0
1.2
C
(W)
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 25
O
GENERATOR
C
Max
100
500
125
PULSE
2.0
6.0
1.4
8.0
8.0
10
10
50
20
24
23
-
-
-
-
Tel: 408-222-8888
INPUT
R
GEN
mmho V
Units
%/
nA
µA
pF
ns
Ω
V
V
A
V
(
O
O
125
C/W)
θ
C
jc
V
V
V
V
V
T
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
Conditions
D
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GEN
= 400mA,
= 125°C
= 10V, I
= 25V,
www.supertex.com
= 0V, I
= V
= 20V, V
= 0V, V
= 0V, V
= 10V, V
= 2.5V, I
= 10V, I
= 10V, I
= 0V,
= 60V,
= 0V, I
(
O
= 25Ω
170
C/W)
θ
ja
DS
, I
D
SD
D
DS
DS
D
D
D
= 100µA
D
DS
DS
= 1.0mA
= 800mA
V
= 500mA
R
= 500mA
= 500mA
= 120V
= 120V,
= 100mA
DD
L
= 0V
= 15V
(mA)
190
I
D.U.T.
DR
OUTPUT
VN2406
I
1.7
(A)
DRM

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