VN2410 Supertex, Inc., VN2410 Datasheet
VN2410
Manufacturer Part Number
VN2410
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
1.VN2410.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VN2410L
Manufacturer:
VISHAY
Quantity:
17 500
Company:
Part Number:
VN2410LA
Manufacturer:
OSRAM
Quantity:
1 100
Company:
Part Number:
VN2410M
Manufacturer:
VISHAY
Quantity:
15 000
Features
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Applications
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-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN2410
Device
ISS
and fast switching speeds
Package Option
VN2410L-G
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
C to +150
300
Value
BV
BV
±20V
DGS
DSS
O
O
C
C
BV
DSS
240
Pin Confi guration
Product Marking
(V)
/BV
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
Y Y W W
2410
VN
R
(max)
YY = Year Sealed
WW = Week Sealed
DRAIN
DS(ON)
(Ω)
10
TO-92 (L)
TO-92 (L)
= “Green” Packaging
SOURCE
GATE
VN2410
I
(min)
D(ON)
1.0
(A)
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VN2410 Summary of contents
Page 1
... BV /BV DSS DGS (V) 240 Pin Confi guration Value BV DSS BV DGS ±20V Product Marking +150 C 300 DS(ON) (max) (Ω) 10 SOURCE DRAIN GATE TO-92 ( Year Sealed 2410 WW = Week Sealed “Green” Packaging TO-92 (L) VN2410 I D(ON) (min) (A) 1.0 ...
Page 2
... 10V 550mA mmho V = 10V 500mA DS D 125 25V 1.0MHz 20 8 60V, 8 400mA 25Ω GEN 0V 190mA PULSE GENERATOR OUTPUT R GEN D.U.T. INPUT VN2410 I † DRM (mA) (A) 190 1 15V ...
Page 3
... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN2410 A102907 Side View ...