VN2410L-G Supertex, VN2410L-G Datasheet
VN2410L-G
Specifications of VN2410L-G
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VN2410L-G Summary of contents
Page 1
... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...
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... 10V 15V 2.5V 100mA GS D Ω 6 10V 500mA 10V 500mA mmho V = 10V 500mA DS D 125 25V 1.0MHz 20 8 60V, 8 400mA 25Ω GEN 0V 800mA PULSE L GENERATOR R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN2406 I † DR DRM (A) 1.7 OUTPUT ...
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... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...