LND150N3-G Supertex, LND150N3-G Datasheet - Page 4

• Manufacturer Part Number: LND150N3-G
• Description: MOSFET Small Signal 500V 1KOhm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of LND150N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1000 Ohm @ 0 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Depletion
• Drain-source On-res: 1000Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 30mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
1.1
1.0
0.9
10
10
5
0
5
0
-50
0
Capacitance vs. Drain-to-Source Voltage
V
V
GS
DS
V
-1
= -10V
BV
GS
= 400V
= -5.0V
DSS
Transfer Characteristics
10
0
Variation with Temperature
0
V
V
T
DS
GS
j
(
50
20
1
O
(V)
(V)
C)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
100
30
(cont.)
C
C
C
ISS
OSS
RSS
3
150
40
4
1.8
1.6
1.4
1.2
1.0
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
-5
5
0
-50
10
0
V
●
GS(OFF)
125°C
Gate Drive Dynamic Characteristics
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and R
100
V
0
DS
25°C
Q
= 20V
8.7pF
0.1
DS
C
(nanocoulombs)
I
Variation with Temperature
R
D
vs R
SOURCE
T
R
j
1K
50
(
DS(ON)
O
SOURCE
C)
●
(Ω)
40V
V
@ I
GS(OFF)
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0.2
D
= 1.0mA
R
@ 100nA
10K
100
SOURCE
I
LND1
↓
D
60V
100K
150
0.3
2.0
1.6
1.2
0.8
0.4
LND150