lnd150 Supertex, Inc., lnd150 Datasheet

lnd150

Manufacturer Part Number

lnd150

Description

N-channel Depletion-mode Mosfet

Manufacturer

Supertex, Inc.

Datasheet

1.LND150.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

lnd150N3-G

Manufacturer:

SAMSUNG

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

lnd150N8-G

Manufacturer:

Quantity:

12 000

Current page: 1 of 4
Download datasheet (70Kb)

Ordering Information

Features

Applications

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Distance of 1.6 mm from case for 10 seconds.

ESD gate protection

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source-drain diode

High input impedance and low C

Solid state relays

Normally-on switches

Converters

Power supply circuits

Constant current sources

Input protection circuits

500V

DSX

DGX

1.0KΩ

(max)

DS(ON)

ISS

1.0mA

(min)

DSS

N-Channel Depletion-Mode

MOSFET

-55°C to +150°C

LND150N3

300°C

TO-92

±20V

DGX

DSX

Order Number / Package

Advanced DMOS Technology

The LND1 is a high voltage N-channel depletion mode (normally-

on) transistor utilizing Supertex’s lateral DMOS technology. The

gate is ESD protected.

The LND1 is ideal for high voltage applications in the areas of

normally-on switches, precision constant current sources, volt-

age ramp generation and amplification.

Package Options

TO-243AA*

LND150N8

Note: See Package Outline section for dimensions.

TO-243AA

(SOT-89)

LND150ND

Die

Where

Product marking for TO-243AA:

= 2-week alpha date code

LN1E

LND150

TO-92

S G D

Related parts for lnd150

lnd150 Summary of contents

Page 1

... Package Options BV DSX BV DGX ±20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 LND150 Product marking for TO-243AA: Die LN1E LND150ND Where = 2-week alpha date code TO-243AA (SOT-89) TO-92 ...

Page 2

... 0.5mA GS D %/° 0V 0.5mA 0V 1.0mA -10V 25V MHz V = 25V 1.0mA µ 25Ω GEN -10V 1.0mA -10V 1.0mA OUTPUT R gen D.U.T. INPUT LND150 I * DRM 30mA 30mA ...

Page 3

... TO-243AA (DC) 100 1000 3 Saturation Characteristics 1. 0. -0.5V -1. (volts) DS Power Dissipation vs. Ambient Temperature 2 TO-243AA 1 TO- 100 125 T (°C) A Thermal Response Characteristics 1.0 0.8 TO-243AA T = 25° 1.2W D 0.4 TO-92 0 25° 0.001 0.01 0.1 1.0 t (seconds) P LND150 5 150 10 ...

Page 4

... R Variation with Temperature GS(OFF 1mA DS(ON 100nA GS(OFF) - 100 T (°C) j Gate Drive Dynamic Characteristics 10 8.7pF 20V 40V 60V 0.1 0.2 Q (nanocoulombs) C 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com LND150 100K 2.0 1.6 1.2 0.8 0.4 150 0.3 08/16/06 ...

Related keywords

lnd150 datasheet
lnd150 data sheet
lnd150 pdf datasheet
lnd150 component
lnd150 part
lnd150 distributor
lnd150 RoHS
lnd150 datasheet download