LND150N3-G Supertex, LND150N3-G Datasheet

LND150N3-G

Manufacturer Part Number

LND150N3-G

Description

MOSFET Small Signal 500V 1KOhm

Manufacturer

Supertex

Type

Power MOSFETr

Datasheet

1.LND150N3-G.pdf (7 pages)

Specifications of LND150N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1000 Ohm @ 0 V

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.03 A

Power Dissipation

740 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Number Of Elements

Polarity

Channel Mode

Depletion

Drain-source On-res

1000Ohm

Drain-source On-volt

500V

Gate-source Voltage (max)

±20V

Drain Current (max)

30mA

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

LND150N3-G

Manufacturer:

SAMSUNG

Quantity:

5 000

Current page: 1 of 7
Download datasheet (622Kb)

Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Product Marking

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

Soldering temperature*

LND150

Device

Distance of 1.6mm from case for 10 seconds.

Solid state relays

Normally-on switches

Converters

Power supply circuits

Constant current sources

Input protection circuits

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source-drain diode

High input impedance and low C

ESD gate protection

NDEW

TO-236AB (SOT-23) (K1)

TO-236AB (SOT-23)

W = Code for Week Sealed

LND150K1-G

= “Green” Packaging

●

Packages may or may not include the following marks: Si or

Package Options

1235 Bordeaux Drive, Sunnyvale, CA 94089

ISS

LND150N3-G

N-Channel Depletion-Mode

DMOS FET

TO-92

-55

C to +150

D 1 5 0

Y Y W W

Si L N

300

Value

±20V

YY = Year Sealed

WW = Week Sealed

TO-243AA (SOT-89)

TO-92 (N3)

DGX

DSX

LND150N8-G

= “Green” Packaging

Pin Conﬁgurations

General Description

The LND150 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and ampliﬁcation.

TO-236AB (SOT-23) (K1)

SOURCE

●

Tel: 408-222-8888

GATE

DRAIN

DSX

500

(V)

/BV

LN1EW

SOURCE

TO-92 (N3)

DGX

TO-243AA (SOT-89) (N8)

●

www.supertex.com

TO-243AA (SOT-89) (N8)

DRAIN

W = Code for Week Sealed

GATE

(max)

(KΩ)

SOURCE

1.0

DS(ON)

= “Green” Packaging

GATE

LND150

SOURCE

(min)

(mA)

1.0

DRAIN

DSS

Related parts for LND150N3-G

LND150N3-G Summary of contents

Page 1

... The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current ISS sources, voltage ramp generation and ampliﬁcation. Package Options TO-92 TO-243AA (SOT-89) LND150N3-G LND150N8-G Pin Conﬁgurations Value BV DSX BV DGX ±20V ...

Page 2

... 1 0V 0.5mA 0V 1.0mA Ω -10V 25V 1.0MHz 1 25V µ 1.0mA 25Ω GEN - - 0 -10V -10V PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com LND150 I I † DR DRM (mA) (mA 1.0mA = 100nA = 100nA = 450V DS = 125 25V = 1.0mA = 1.0mA DD L OUTPUT D.U.T. ...

Page 3

... V (V) DS Power Dissipation vs. Ambient Temperature 2 TO-243AA 1 TO-92 TO-236AB 100 125 T (°C) A Thermal Response Characteristics 1.0 TO-243AA 0 25° 1.2W D 0.6 0.4 TO- 1.0W 0 25° 0.001 0.01 0.1 1.0 t (seconds) P ● Tel: 408-222-8888 ● www.supertex.com LND150 V = 1.0V GS 0.5V 0V -0.5V -1.0V 5 150 10 ...

Page 4

... SOURCE V and R Variation with Temperature GS(OFF) DS 1.8 1 1.0mA DS(ON) D 1.4 1 100nA GS(OFF) 1.0 0.8 - 100 Gate Drive Dynamic Characteristics 10 8.7pF V = 20V 40V 60V 0.1 0.2 Q (nanocoulombs) C ● Tel: 408-222-8888 ● www.supertex.com LND150 100K 2.0 1.6 1.2 0.8 0.4 150 0.3 ...

Page 5

... Side View Symbol A A1 MIN 0.89 0.01 Dimension NOM - (mm) MAX 1.12 0.10 JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309 Seating Plane 0.88 0.30 2.80 2.10 - ...

Page 6

... Bottom View Symbol A MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009 Side View .014 .014 .175 † ...

Page 7

... JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version E051509. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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