TP5335K1-G Supertex, TP5335K1-G Datasheet

MOSFET Small Signal 350V 25Ohm

TP5335K1-G

Manufacturer Part Number
TP5335K1-G
Description
MOSFET Small Signal 350V 25Ohm
Manufacturer
Supertex
Datasheet

Specifications of TP5335K1-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
30 Ohm @ 10 V
Drain-source Breakdown Voltage
350 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.085 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
TP5335
Distance of 1.6mm from case for 10 seconds.
Device
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Analog switches
Power management
Telecom switches
ISS
and fast switching speeds
TO-236AB (SOT-23)
Package Option
TP5335K1-G
P-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55
BV
O
C to +150
DSS
-350
(V)
/BV
300
Value
BV
BV
±20V
DGS
DGS
DSS
O
O
C
C
General Description
The Supertex TP5335 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Pin Configuration
Product Marking Information
Package may or may not include the following marks: Si or
R
(max)
DS(ON)
(Ω)
30
P3SW
Tel: 408-222-8888
V
(max)
TO-236AB (SOT-23) (K1)
TO-236AB (SOT-23) (K1)
-2.4
GS(TH)
(V)
DRAIN
W = Code for week sealed
GATE
= “Green” Packaging
www.supertex.com
SOURCE
TP5335

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TP5335K1-G Summary of contents

Page 1

... Power management ► Telecom switches Ordering Information Package Option Device TO-236AB (SOT-23) TP5335 TP5335K1-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... -25V 1MHz -25V -150mA 25Ω, GEN PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com TP5335 I I † DR DRM (mA) (mA) -85 -400 = -100µ -1.0mA D = -1.0mA 125 -330V DS = -25V DS = -25V DS = -150mA D = -200mA D = -200mA D = -200mA D = -200mA SD = -200mA SD D.U.T. Output L ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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