SUD50N03-12P-E3 Vishay, SUD50N03-12P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-12P-E3
• Description: MOSFET Power 30V 17.5A 46.8W
• Manufacturer: Vishay

Specifications of SUD50N03-12P-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 6500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 72267
S-31875—Rev. , 15-Sep-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
- 25
D
T
GS
C
= 15 A
C
rss
= - 55_C
5
= 10 V
10
V
T
0
DS
J
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
I
Transconductance
D
10
25
- Drain Current (A)
Capacitance
20
C
iss
50
15
75
C
oss
30
100
20
125
40
125_C
25
25_C
150
175
New Product
50
30
0.05
0.04
0.03
0.02
0.01
0.00
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
V
J
= 15 V
GS
0.3
V
6
= 150_C
SD
20
Q
= 4.5 V
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
0.6
SUD50N03-12P
Vishay Siliconix
40
18
0.9
T
V
J
GS
= 25_C
60
www.vishay.com
= 10 V
24
1.2
80
30
1.5
3