TGF2022-12 TriQuint, TGF2022-12 Datasheet - Page 3

• Manufacturer Part Number: TGF2022-12
• Description: RF GaAs DC-20GHz 1.2mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2022-12

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 450 mS
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031680

Power Tuned:
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
SYMBOL
Efficiency
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
Tuned:
Γ
Γ
OIP3
Gain
Gain
Psat
PAE
Psat
PAE
L
L
2/
2/
θ
(channel to backside of carrier)
JC
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
Thermal Resistance
Saturated Output Power
Saturated Output Power
Power Added Efficiency
Power Added Efficiency
Parameter
PARAMETER
Load Reflection
Load Reflection
Power Gain
Power Gain
Output TOI
coefficient
coefficient
RF CHARACTERIZATION TABLE 1/
THERMAL INFORMATION
Idq = 90 mA
0.579 ∠ 154
0.57 ∠137.5
Vd = 10V
Vd = 12 V
Idq = 90 mA
Pdiss = 1.08 W
(T
Test Conditions
31.9
52.4
12.9
31.3
58.3
13
40
A
= 25 °C, Nominal)
TABLE IV
TABLE III
f = 10 GHz
0.558 ∠145.3
0.576 ∠136.6
Idq = 90 mA
Vd = 12V
32.6
51.9
12.9
32.3
56.0
13
39
(
T
145
o
CH
C)
0.759 ∠153.3
0.696 ∠155.4
Idq = 90 mA
Vd = 10V
31.1
41.5
30.5
46.0
8.3
8.5
40
(°C/W)
Product Datasheet
θ
69
f = 18 GHz
JC
0.718 ∠153.2
0.791 ∠151.3
1.6 E+6
Idq = 90 mA
(HRS)
Vd = 12V
T
TGF2022-12
September 7, 2007
M
31.7
37.0
31.1
42.5
8.0
8.3
39
Rev -
UNITS
dBm
dBm
dBm
dB
dB
%
%
-
-
3