TGF2022-06 TriQuint, TGF2022-06 Datasheet
TGF2022-06
Specifications of TGF2022-06
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TGF2022-06 Summary of contents
Page 1
... The maximum power added efficiency is 58% which makes the TGF2022-06 appropriate for high efficiency applications. The TGF2022-06 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-06 has a protective surface passivation layer providing environmental robustness ...
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... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS Parameter 1/ TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum Typical - - -1.5 -30 -30 Product Datasheet September 7, 2007 TGF2022-06 Value Notes 12 282 dBm See note 150 °C 320 °C -65 to 150 °C Maximum Unit 180 - mA ...
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... Product Datasheet September 7, 2007 TGF2022- GHz Vd = 10V Vd = 12V Idq = 45 mA Idq = 45 mA 28.1 28.7 41.5 37.0 8.3 8.0 0.525 ∠128.9 0.562 ∠125.7 27.5 28.1 46.0 42 ...
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... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE IV THERMAL INFORMATION Test Conditions Idq = 45 mA Pdiss = 0.54 W Measured Fixtured Data IMD3 vs. output power/tone at 10 & 18 GHz Output power/tone (dBm) Product Datasheet September 7, 2007 TGF2022-06 θ (HRS) (°C/W) 145 138 1.6 E ...
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... Efficiency tuned data at 10GHz 180 19 170 18 17 160 16 150 15 140 14 130 13 120 12 110 11 100 For efficiency tuned devices at 10GHz: Input matched for maximum gain & output load is: Product Datasheet September 7, 2007 TGF2022- 12V 45mA Vd = 10V 45mA Input Power (dBm 12V 45mA Vd = 10V 45mA ...
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... For power tuned devices at 18GHz Efficiency tuned data at 18GHz 14 140 13 130 12 120 11 10 110 9 100 For efficiency tuned devices at 18GHz: Product Datasheet September 7, 2007 TGF2022- 12V 45mA Vd = 10V 45mA Input Power (dBm 12V 45mA Vd = 10V 45mA Input Power (dBm Rev - ...
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... Product Datasheet September 7, 2007 TGF2022-06 L Drain Unit pHEMT cell Reference Plane Source Gate Drain UPC L - via = 0.0135 nH (2x) Source Vd = 10V Vd = 12V Idq = 60mA Idq = 45mA 0.24 0.24 ...
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... Product Datasheet September 7, 2007 TGF2022-06 s12 ang s22 s22 ang deg dB deg 70.86 -2.990 -12.01 55.18 -3.802 -21.21 43.57 -4.700 -27.22 35.20 -5.480 -31.06 29 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Mechanical Drawing (Vg) 0.090 x 0.090 (0.004 x 0.004) (Vd) 0.090 x 0.090 (0.004 x 0.004) Product Datasheet September 7, 2007 TGF2022-06 0.264 [0.010] 9 Rev - ...
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... Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet September 7, 2007 TGF2022-06 10 Rev - ...