TGF2022-12 TriQuint, TGF2022-12 Datasheet - Page 2

• Manufacturer Part Number: TGF2022-12
• Description: RF GaAs DC-20GHz 1.2mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2022-12

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 450 mS
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031680

TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
1/
2/
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Symbol
| I
T
Symbol
T
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
P
P
T
V
V
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
Junction operating temperature will directly affect the device median time to failure
(T
at the lowest possible levels.
I
STG
CH
G
V
+
V
IN
M
Idss
D
+
Gm
-
V
For a median life time of 1E+6 hrs, Power dissipation is limited to:
M
BGD
|
BGS
). For maximum life, it is recommended that junction temperatures be maintained
P
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
P
Saturated Drain Current
D
(max) = (150 °C – TBASE °C) / 69.0 (°C/W)
Breakdown Voltage
Breakdown Voltage
Transconductance
D
Pinch-off Voltage
.
Gate-Source
Parameter
Gate-Drain
DC PROBE CHARACTERISTICS
Parameter 1/
(T
MAXIMUM RATINGS
A
= 25 °C, Nominal)
TABLE II
Minimum
TABLE I
-1.5
-30
-30
-
-
Typical
360
450
-1
-
-
-65 to 150 °C
See note 3
-5V to 0V
564 mA
26 dBm
150 °C
320 °C
Value
12.5 V
14 mA
Maximum
Product Datasheet
-0.5
-14
-8
-
-
TGF2022-12
September 7, 2007
Unit
mA
mS
V
V
V
Notes
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Rev -
2