TGF2022-12 TriQuint, TGF2022-12 Datasheet

RF GaAs DC-20GHz 1.2mm Pwr pHEMT (0.35um)

TGF2022-12

Manufacturer Part Number
TGF2022-12
Description
RF GaAs DC-20GHz 1.2mm Pwr pHEMT (0.35um)
Manufacturer
TriQuint
Datasheet

Specifications of TGF2022-12

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
450 mS
Gate-source Breakdown Voltage
- 8 V
Package / Case
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1031680

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF2022-12
Manufacturer:
TriQuint Semiconductor
Quantity:
135
Part Number:
TGF2022-12
Manufacturer:
Triquint
Quantity:
1 400
DC - 20 GHz Discrete power pHEMT
Product Description
The TriQuint TGF2022-12 is a discrete
1.2 mm pHEMT which operates from
DC-20 GHz. The TGF2022-12 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-12 typically provides
> 31 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-12 appropriate for
high efficiency applications.
The TGF2022-12 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-12 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
Key Features and Performance
Primary Applications
Frequency Range: DC - 20 GHz
> 31 dBm Nominal Psat
58% Maximum PAE
39 dBm Nominal OIP3
13 dB Nominal Power Gain
Suitable for high reliability applications
1.2mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 90-150mA
(U
Chip Dimensions: 0.57 x 0.79 x 0.10 mm
35
30
25
20
15
10
5
0
nder RF Drive, Id rises from 90mA to 300mA)
0
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
2
4
MSG
Frequency (GHz)
(0.022 x 0.031 x 0.004 in)
6
Product Datasheet
8
TGF2022-12
10
September 7, 2007
12
MAG
14
Rev -
16
1

Related parts for TGF2022-12

TGF2022-12 Summary of contents

Page 1

... The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-12 has a protective surface passivation layer providing environmental robustness ...

Page 2

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS Parameter 1/ TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum - - -1.5 -30 -30 Product Datasheet September 7, 2007 TGF2022-12 Value 12 564 dBm See note 3 150 °C 320 °C -65 to 150 °C Typical Maximum Unit 360 - mA ...

Page 3

... TABLE IV THERMAL INFORMATION Test Conditions Idq = 90 mA Pdiss = 1.08 W Product Datasheet September 7, 2007 TGF2022- GHz Vd = 10V Vd = 12V Idq = 90 mA Idq = 90 mA 31.1 31.7 41.5 37.0 8.3 8.0 0.696 ∠155.4 0.718 ∠153.2 30.5 31.1 46.0 42.5 8 ...

Page 4

... Product Datasheet September 7, 2007 TGF2022-12 L Drain Unit pHEMT cell Reference Plane Source Gate UPC Source Vd = 10V Vd = 12V Idq = 60mA Idq = 45mA 0.23 0.24 0.24 0.46 0.45 ...

Page 5

... Gate Pads (2x) 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Linear Model for 1.2mm pHEMT L - via = 0.0135 nH (3x) UPC UPC Product Datasheet September 7, 2007 TGF2022-12 3 Drain Pads (2x Rev - ...

Page 6

... Product Datasheet September 7, 2007 TGF2022-12 s12 ang s22 s22 ang deg dB deg 51.44 -7.225 -40.59 31.56 -9.792 -62.45 21.51 -11.461 -74.20 15.62 -12.337 -81.55 11 ...

Page 7

... Bond pads #3-4: (Drain) 0.090 x 0.090 (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Mechanical Drawing Product Datasheet September 7, 2007 TGF2022-12 0.488 [0.019] DRAIN 0.296 [0.012] 7 Rev - ...

Page 8

... Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet September 7, 2007 TGF2022-12 8 Rev - ...

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