TWR-S08MM128-KIT Freescale Semiconductor, TWR-S08MM128-KIT Datasheet - Page 42

• Manufacturer Part Number: TWR-S08MM128-KIT
• Description: MCU, MPU & DSP Development Tools For 9S08MM128 USB CAN
• Manufacturer: Freescale Semiconductor

Specifications of TWR-S08MM128-KIT

• Processor To Be Evaluated: 9S08MM128
• Data Bus Width: 8 bit
• Interface Type: USB, CAN
• Silicon Manufacturer: Freescale
• Core Architecture: Coldfire, HCS08
• Core Sub-architecture: Coldfire V1, HCS08
• Silicon Core Number: MCF51, MC9S08
• Silicon Family Name: Flexis - MCF51MM, Flexis - S08MM
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
3
4
Electrical Characteristics
2.13
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory chapter in the Reference Manual for this device
(MC9S08MM128RM).
42
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
#
1
2
3
4
5
6
7
8
9
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Supply voltage for program/erase
–40C to 105C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25C
L
Flash Specifications
to T
H
= –40C to + 105C
4
Characteristic
2
2
1
3
2
2
Table 23. Flash Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
Read
prog
10,000
Min
150
1.8
1.8
15
—
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
DD
Max
6.67
200
3.6
3.6
—
—
—
supply. For more detailed
Freescale Semiconductor
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
C
D
D
D
D
C
C
P
P
P
P