FOD817BS Fairchild Semiconductor, FOD817BS Datasheet - Page 3
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FOD817BS
Manufacturer Part Number
FOD817BS
Description
Transistor Output Optocouplers TRANSISTOR OUTPUT SMD LEAD BEND
Manufacturer
Fairchild Semiconductor
Datasheet
1.FOD817D300.pdf
(12 pages)
Specifications of FOD817BS
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
200 mV
Isolation Voltage
5000 Vrms
Current Transfer Ratio
260 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP SMD Black
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FOD817BSD
Manufacturer:
TI
Quantity:
12 000
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Electrical Characteristics
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
*Typical values at T
EMITTER
DETECTOR
Symbol AC Characteristic
Symbol
V
Symbol
CE (sat)
BV
BV
CTR
I
f
CEO
t
t
C
V
C
I
r
f
CEO
ECO
R
F
t
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Characteristic
Forward Voltage
Reverse Leakage Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
DC
A
= 25°C
Parameter
FOD817C
FOD817D
FOD814A
FOD817A
FOD817B
FOD814
FOD817
FOD814
FOD817
Device
(T
FOD814,
FOD814,
FOD814
FOD817
FOD817
Device
A
= 25°C Unless otherwise specified.)
I
I
I
I
F
F
F
F
= ±1mA, V
= 5mA, V
= ±20mA, I
= 20mA, I
V
-3dB
V
FOD814
FOD817
FOD817
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
Device
CE
CE
= 5V, I
= 2 V, I
Test Conditions
CE
C
Test Conditions
3
CE
C
= 1mA
C
= 5V
C
= 1mA
= 5V
= 2mA, R
I
I
V
V = 0, f = 1kHz
V = 0, f = 1kHz
V
V
I
I
I
I
= 2mA, R
Test Conditions
F
F
C
C
E
E
R
CE
CE
= ±20mA
= 20mA
= 0.1mA, I
= 0.1mA, I
= 10µA, I
= 10µA, I
(1)
= 4.0V
(1)
= 20V, I
= 20V, I
L
L
= 100 ,
F
F
= 100
F
F
F
F
= 0
= 0
= 0
= 0
= 0
= 0
(2)
Min.
70
70
6
6
Min.
Min.
130
200
300
20
50
50
80
15
Typ.*
1.2
1.2
50
30
Typ.* Max. Unit
Typ.*
0.1
0.1
80
4
3
Max.
250
250
100
100
1.4
1.4
10
Max.
www.fairchildsemi.com
300
150
600
160
260
400
600
0.2
0.2
18
18
Unit
µA
pF
nA
V
V
V
Unit
kHz
%
µs
µs
V