H11A1M Fairchild Semiconductor, H11A1M Datasheet - Page 8

• Manufacturer Part Number: H11A1M
• Description: Transistor Output Optocouplers Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of H11A1M

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5250 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP White
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 30V
• Package Type: PDIP
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
Carrier Tape Specification
Reflow Profile
C
21.0
4.5
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
0.1 MAX
0.20
0.1
0.30
User Direction of Feed
0.05
60
33 Sec
1.822 C/Sec Ramp up rate
4.0
10.1
0.1
120
0.20
2.0
Time (s)
12.0
8
0.05
0.1
180
183 C = 90 Sec
260 C
Time above
270
9.1
Ø1.5 MIN
Ø1.5
>245 C = 42 Sec
0.20
11.5
1.75
360
0.1/-0
1.0
24.0
0.10
0.3
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