H11A1M Fairchild Semiconductor, H11A1M Datasheet - Page 4

Transistor Output Optocouplers Optocoupler Phototransistor

H11A1M

Manufacturer Part Number
H11A1M
Description
Transistor Output Optocouplers Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of H11A1M

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor With Base
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
400 mV
Isolation Voltage
5250 Vrms
Maximum Forward Diode Voltage
1.5 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP White
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.5V
Forward Current
60mA
Collector-emitter Voltage
30V
Package Type
PDIP
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H11A1M
Manufacturer:
TI
Quantity:
4 450
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.3
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
V
V
V
RIO
CTI
IORM
IOTM
PR
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V
IORM
IORM
x 1.875 = V
x 1.5 = V
PR
PR
, Type and Sample Test
Parameter
, 100% Production Test
IO
= 500V
4
Min.
1594
1275
6000
175
850
10
0.5
7
7
9
55/100/21
Typ.
I-IV
I-IV
2
Max.
www.fairchildsemi.com
V
V
V
V
Unit
mm
mm
mm
peak
peak
peak
peak

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