QSB34ZR Fairchild Semiconductor, QSB34ZR Datasheet - Page 5

• Manufacturer Part Number: QSB34ZR
• Description: Photodiodes Infrared Photodiode SMD Si Pin
• Manufacturer: Fairchild Semiconductor
• Type: Silicon Infrared PIN Photodioder

Specifications of QSB34ZR

• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 37 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 50 ns
• Maximum Fall Time: 50 ns
• Package / Case: PLCC-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 37uA
• Rise Time: 50ns
• Fall Time: 50ns
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor Corporation
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3
Ordering Information
Tape & Reel Dimensions
Option
QSB34GR
QSB34ZR
QSB34CGR
QSB34CZR
CATHODE
COVER TAPE
Unit: mm
Ø1.5±0.1
Ø13±0.5
4.20±0.10
5
Z-Bend reversed, 1000 units per reel
Z-Bend reversed, 1000 units per reel
Gullwing, 1000 units per reel
Gullwing, 1000 units per reel
Ø1.50±0.25
Description
2.0±0.05
13.2±1.5
16.0±0.2
8.0±0.10
4.0±0.10
1.45±0.10
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