FQA24N50F_F109 Fairchild Semiconductor, FQA24N50F_F109 Datasheet - Page 4

• Manufacturer Part Number: FQA24N50F_F109
• Description: MOSFET N-CH 500V 24A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQA24N50F_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 290W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
Operation in This Area
is Limited by R
V
vs Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
C
J
= 150
= 25
DS(on)
- 5
0 .0 1
o
0 .0 5
0 .0 2
D = 0 .5
C
50
o
0 .1
C
0 .2
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
1 ms
10
1 0
(Continued)
2
o
C]
- 4
s i n g l e p u ls e
100 s
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
G S
= 250 μ A
150
10 s
= 0 V
1 0
- 3
200
10
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
20
15
10
5
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
θ
J M
DM
J C
50
- T
( t) = 0 .4 3 ℃ /W M a x .
C
vs Case Temperature
= P
T
J
T
t
vs Temperature
, Junction Temperature [
1
C
D M
0
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 12 A
Rev. A2, September 2001
= 10 V
150
200