FQB25N33TM_F085 Fairchild Semiconductor, FQB25N33TM_F085 Datasheet

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FQB25N33TM_F085

Manufacturer Part Number
FQB25N33TM_F085
Description
MOSFET N-CH 330V 25A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FQB25N33TM_F085

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
330V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 15V
Input Capacitance (ciss) @ Vds
2010pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FQB25N33TM_F085 Rev. A
FQB25N33TM_F085
330V N-Channel MOSFET
Features
• 25A, 330V, R
• Low gate charge (typical 58nC)
• Low Crss (typical 40pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
Symbol
Symbol
D
DM
AR
DSS
GSS
AS
AR
D
J
L
θJC
θJA
θJA
, T
STG
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate -Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
DS(on)
= 0.23Ω @V
- Pulsed
- Continuous (T
- Continuous (T
- Derate above 25
A
C
= 25
= 25
GS
o
= 10V
o
C) *
C)
Parameter
Parameter
C
C
= 25
= 100
o
C
o
C)
o
C)
1
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
-55 to +150
Ratings
Ratings
62.5
16.0
330
100
±30
370
250
300
0.5
4.5
3.1
2.0
40
25
25
37
www.fairchildsemi.com
April 2010
o
o
o
Units
W/
Units
V/ns
C/W
C/W
C/W
mJ
mJ
o
o
W
W
V
A
A
V
A
A
C
C
o
C
tm

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FQB25N33TM_F085 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQB25N33TM_F085 Rev. A General Description = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... Starting ≤ 25A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB25N33TM_F085 Rev. A Package Reel Size D2-PAK 330mm T = 25°C unless otherwise noted C Test Conditions I = 250µ 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C iss 2000 C oss 1000 C rss 0 0 Drain-Source Voltage [V] DS FQB25N33TM_F085 Rev. A Figure 2. Transfer Characteristics 100 Notes : 1. 250 µ s Pulse Test 0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 100 10 1 0.1 ...

Page 4

... 150 J 3. Single Pulse 0 Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FQB25N33TM_F085 Rev. A (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 * Notes : 0 µ 250 A D 0.0 -100 100 150 200 o C] Figure 10. Maximum Drain Current vs. Case Temperature 30 25 100 µ ...

Page 5

... Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB25N33TM_F085 Rev. A Gate Charge Test Circuit & Waveform 5 www.fairchildsemi.com ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB25N33TM_F085 Rev www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB25N33TM_F085 Rev. A Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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