FDD2572_F085 Fairchild Semiconductor, FDD2572_F085 Datasheet
FDD2572_F085
Specifications of FDD2572_F085
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FDD2572_F085 Summary of contents
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... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems ©2008 Fairchild Semiconductor Corporation FDD2572_F085 Rev.A ® MOSFET Applications = 9A • ...
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... Turn-Off Time OFF Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Starting T = 25° 0.2mH 19A FDD2572_F085 Rev.A Package Reel Size TO-252AA 330mm T = 25°C unless otherwise noted C Test Conditions I = 250 120V ...
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... Figure 3. Normalized Maximum Transient Thermal Impedance 500 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 V = 10V FDD2572_F085 Rev 25°C unless otherwise noted 150 175 125 Figure 2. Maximum Continuous Drain Current vs SINGLE PULSE - RECTANGULAR PULSE DURATION (s) ...
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... GS Figure 7. Transfer Characteristics 60 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10V DRAIN CURRENT (A) D Figure 9. Drain to Source On Resistance vs Drain Current FDD2572_F085 Rev 25°C unless otherwise noted C 100 10 s 100 s 10 1ms 10ms 0.1 0.001 100 200 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6 ...
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... Junction Temperature 1000 1000 OSS RSS GD 100 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage FDD2572_F085 Rev 25°C unless otherwise noted C 1 250 1.1 1.0 0.9 80 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit FDD2572_F085 Rev DUT 0.01 Figure 16. Unclamped Energy Waveforms DUT g(TH g(REF) 0 Figure 18. Gate Charge Waveforms d(ON) ...
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... The area, in square inches or square centimeters is the top copper area including the gate and source pads. 23.84 33.32 + ------------------------------------ - 0.268 + Area 154 33.32 + --------------------------------- - 1.73 + Area FDD2572_F085 Rev and the JM 125 , application’s ambient 100 never exceeded (EQ 0.01 (0.0645 Figure 21 ...
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... S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. FDD2572_F085 Rev. A DPLCAP ...
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... FDD2572_F085 Rev. A DPLCAP RSLC2 - RDRAIN 6 ESG ...
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... FDD2572_F085 Rev. A JUNCTION th RTHERM1 6 RTHERM2 5 RTHERM3 4 RTHERM4 3 RTHERM5 ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD2572_F085 Rev.A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...