FDS6673BZ_F085 Fairchild Semiconductor, FDS6673BZ_F085 Datasheet - Page 5

• Manufacturer Part Number: FDS6673BZ_F085
• Description: MOSFET P-CH 30V 14.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6673BZ_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS6673BZ_F085 Rev. A
Typical Characteristics
10
10
10
1E-3
1E-4
0.5
0.01
10
0.1
1
10
4
3
2
2
1
10
-4
-4
SINGLE PULSE
R
T
DUTY CYCLE-DESCENDING ORDER
D = 0.5
A
θ
JA
= 25
0.2
0.1
0.05
0.02
0.01
= 125
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
o
C
10
Figure 13. Junction-to-Case Transient Thermal Response Curve
o
10
C/W
-3
V
-3
GS
= -10V
T
SINGLE PULSE
R
J
θ
JA
= 25 °C unless otherwise noted
= 125
10
10
-2
o
-2
C/W
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
10
θJA
10
2
t
1
+ T
2
t
2
A
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10
10
3
3