FQD6N60CTM_WS Fairchild Semiconductor, FQD6N60CTM_WS Datasheet
FQD6N60CTM_WS
Specifications of FQD6N60CTM_WS
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FQD6N60CTM_WS Summary of contents
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... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FQD6N60C Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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Package Marking and Ordering Information Device Marking Device FQD6N60C FQD6N60CTM FQD6N60C FQD6N60CTF Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV / Breakdown Voltage Temperature DSS T Coefficient J I Zero Gate Voltage Drain Current DSS I ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5 Bottom : 4 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by R ...
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3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQD6N60C ...
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Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQD6N60C Rev. A Peak Diode Recovery ...
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Mechanical Dimensions FQD6N60C Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ CoolFET™ FRFET™ GlobalOptoisolator™ CROSSVOLT™ ...