FDS4141_F085 Fairchild Semiconductor, FDS4141_F085 Datasheet - Page 3

• Manufacturer Part Number: FDS4141_F085
• Description: MOSFET P-CH 40V 10.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4141_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2005pF @ 20V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS4141_F085 Rev. A
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
o
C, L = 6.2mH, I
AS
Parameter
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
= -8.6A
T
A
= 25
o
C unless otherwise noted
V
V
I
I
I
SD
SD
F
DD
GS
= -10.5A, d
certification.
= -10.5A
= -2.1A
= -20V, I
= -10V, R
Test Conditions
3
D
SD
GEN
= -10.5A
/dt = 100A/µs
= 6Ω
Min
-
-
-
-
-
-
-
-
-
-
11.6
13.4
Typ
-0.8
-0.7
9.7
4.4
41
26
-
-
www.fairchildsemi.com
17.4
Max
-1.3
-1.2
25
84
34
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V