FDD5N50NZFTM Fairchild Semiconductor, FDD5N50NZFTM Datasheet
FDD5N50NZFTM
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FDD5N50NZFTM Summary of contents
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... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDD5N50NZF Rev. A Description = 1.85A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...
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... Package Marking and Ordering Information Device Marking Device FDD5N50NZF FDD5N50NZFTM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Body Leakage Current GSS On Characteristics ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics 15 10.0 V 8.0 V 7.0 V 6.5 V 6 5.0 V 0.1 0.03 0 Drain-Source Voltage[V] DS Figure 3. On-Resistance ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.15 1.10 1.05 1.00 0.95 0.90 -75 - Junction Temperature J Figure 9. Maximum Safe Operating Area vs. Case Temperature Operation in This Area ...
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FDD5N50NZF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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Mechanical Dimensions FDD5N50NZF Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ ...