FDC5661N_F085 Fairchild Semiconductor, FDC5661N_F085 Datasheet

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FDC5661N_F085

Manufacturer Part Number
FDC5661N_F085
Description
MOSFET N-CH 60V 6-SSOT
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC5661N_F085

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
763pF @ 25V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDC5661N_F085 Rev. A
FDC5661N_F085
N-Channel Logic Level PowerTrench
60V, 4A, 60mΩ
Features
R
R
Typ Q
Low Miller Charge
Qualified to AEC Q101
RoHS Compliant
DS(on)
DS(on)
g(TOT)
= 47mΩ at V
= 60mΩ at V
= 14.5nC at V
GS
GS
= 10V, I
= 4.5V, I
GS
= 10V
D
D
= 4.3A
= 4A
1
Applications
DC/DC converter
Motor Drives
®
MOSFET
October 2008
www.fairchildsemi.com
tm

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FDC5661N_F085 Summary of contents

Page 1

... N-Channel Logic Level PowerTrench 60V, 4A, 60mΩ Features R = 47mΩ 10V, I DS(on 60mΩ 4.5V, I DS(on Typ Q = 14.5nC 10V g(TOT) GS Low Miller Charge Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDC5661N_F085 Rev. A ® MOSFET Applications DC/DC converter = 4. Motor Drives 1 October 2008 tm www.fairchildsemi.com ...

Page 2

... Reverse Transfer Capacitance rss R Gate Resistance G Q Total Gate Charge at 10V g(TOT) Q Gate to Source Gate Charge gs Q Gate to Drain “Miller“ Charge gd FDC5661N_F085 Rev 25°C unless otherwise noted A Parameter = 10V copper pad area Package Reel Size SSOT-6 7” 25°C unless otherwise noted ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDC5661N_F085 Rev ...

Page 4

... SINGLE PULSE C/W θ Figure 3. 100 V = 10V GS 10 SINGLE PULSE C/W θ FDC5661N_F085 Rev 100 125 150 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance - RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 10V 4.5V ...

Page 5

... Saturation Characteristics 2.0 PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE J Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature FDC5661N_F085 Rev PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 10us 100us 12 1ms 8 10ms 100ms 100 300 0 Figure 6. ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4. 20V GATE CHARGE(nC) g Figure 13. Gate Charge vs Gate to Source Voltage FDC5661N_F085 Rev. A 2000 1000 100 10 80 120 160 0 Figure 12. Capacitance vs Drain to Source V = 30V DD = 40V iss C oss C rss f = 1MHz DRAIN TO SOURCE VOLTAGE ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDC5661N_F085 Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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