STL65DN3LLH5 STMicroelectronics, STL65DN3LLH5 Datasheet - Page 5

• Manufacturer Part Number: STL65DN3LLH5
• Description: MOSFET N-CH POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL65DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (5x6)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0059 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 65 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10881-2

STL65DN3LLH5
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
SD
I
Q
t
SD
t
t
r
rr
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18323 Rev 1
V
R
(see
I
I
di/dt = 100 A/µs,
V
DD
G
SD
SD
DD
=4.7 Ω, V
Test conditions
=15 V, I
= 19 A, V
= 19 A,
Test conditions
Figure
=25 V, Tj=150 °C
D
13)
= 9.5 A,
GS
GS
=10 V
=0
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
1.8
24
12
8.8
18
26
4
Max.
Max.
1.1
19
76
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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