STL65DN3LLH5 STMicroelectronics, STL65DN3LLH5 Datasheet

MOSFET N-CH POWERFLAT

STL65DN3LLH5

Manufacturer Part Number
STL65DN3LLH5
Description
MOSFET N-CH POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL65DN3LLH5

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (5x6)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0059 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
22 V
Continuous Drain Current
65 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10881-2

Available stocks

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Manufacturer
Quantity
Price
Part Number:
STL65DN3LLH5
Manufacturer:
ST
Quantity:
15 000
Part Number:
STL65DN3LLH5
Manufacturer:
STMicroelectronics
Quantity:
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Part Number:
STL65DN3LLH5
Manufacturer:
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Features
1. The value is rated according R
Application
Switching applications
Description
This product utilizes the 5
rules of ST’s proprietary STripFET™ technology.
The lowest available R
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
December 2010
STL65DN3LLH5
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
DS(on)
STL65DN3LLH5
Type
Order code
* Q
Device summary
g
industry benchmark
V
30 V
DS(on)
DSS
th
generation of design
thj-pcb
*Q
<0.0065 Ω
g
R
, in this chip scale
max
DS(on)
65DN3LLH5
DS(on)
Marking
19 A
Doc ID 18323 Rev 1
I
D
(1)
Dual N-channel 30 V, 0.0059 Ω , 19 A
Figure 1.
PowerFLAT™(5x6)
Double island
Package
Internal schematic diagram
PowerFLAT™ (5x6)
STL65DN3LLH5
Double island
Tape and reel
Packaging
www.st.com
1/12
12

Related parts for STL65DN3LLH5

STL65DN3LLH5 Summary of contents

Page 1

... December 2010 Dual N-channel 30 V, 0.0059 Ω DS(on max <0.0065 Ω ( DS(on) Figure this chip scale g Marking PowerFLAT™(5x6) 65DN3LLH5 Double island Doc ID 18323 Rev 1 STL65DN3LLH5 PowerFLAT™ (5x6) Double island Internal schematic diagram Package Packaging Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 18323 Rev 1 STL65DN3LLH5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL65DN3LLH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (2) P Total dissipation at T TOT ...

Page 4

... 4 Parameter Test conditions V =25 V, f=1 MHz = =4 (see Figure MHz open drain, Bias=0 test signal level = 20 mV, open drain Doc ID 18323 Rev 1 STL65DN3LLH5 Min. Typ 250 µ 9.5 A 0.0059 0.0065 D = 9.5 A 0.0071 0.0079 D Min. Typ. Max. 1500 - 230 4.4 14) - 1.6 Max. ...

Page 5

... STL65DN3LLH5 Table 7. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics Electrical characteristics (curves) 2.1 Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/12 Figure 3. Figure 5. vs temperature Figure 7. Doc ID 18323 Rev 1 STL65DN3LLH5 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STL65DN3LLH5 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Doc ID 18323 Rev 1 Electrical characteristics 7/12 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 18323 Rev 1 STL65DN3LLH5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL65DN3LLH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 18323 Rev 1 Package mechanical data ® 9/12 ...

Page 10

... Figure 19. PowerFLAT™ (5x6) double island drawing 10/12 mm Min. Typ. 0.80 0.83 0.02 0.20 0.35 0.40 5.00 4.75 4.11 4.21 6.00 5.75 3.51 3.61 2.32 2.42 1.27 0.70 0.80 0.48 0.58 Doc ID 18323 Rev 1 STL65DN3LLH5 Max. 0.90 0.05 0.47 4.31 3.71 2.52 0.90 0.68 ...

Page 11

... STL65DN3LLH5 5 Revision history Table 10. Document revision history Date 07-Dec-2010 Revision 1 First release Doc ID 18323 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 18323 Rev 1 STL65DN3LLH5 ...

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