STL65DN3LLH5 STMicroelectronics, STL65DN3LLH5 Datasheet - Page 10

• Manufacturer Part Number: STL65DN3LLH5
• Description: MOSFET N-CH POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL65DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (5x6)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0059 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 65 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10881-2

Package mechanical data
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Table 9.
Figure 19. PowerFLAT™ (5x6) double island drawing
Dim.
D1
D2
A1
A3
E1
E2
E3
L1
A
D
E
b
e
L
PowerFLAT™ (5x6) double island mechanical data
Min.
0.80
0.35
4.11
3.51
2.32
0.70
0.48
Doc ID 18323 Rev 1
Typ.
0.83
0.02
0.20
0.40
5.00
4.75
4.21
6.00
5.75
3.61
2.42
1.27
0.80
0.58
mm
STL65DN3LLH5
Max.
0.90
0.05
0.47
4.31
3.71
2.52
0.90
0.68