STL65DN3LLH5 STMicroelectronics, STL65DN3LLH5 Datasheet - Page 4

MOSFET N-CH POWERFLAT

STL65DN3LLH5

Manufacturer Part Number
STL65DN3LLH5
Description
MOSFET N-CH POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL65DN3LLH5

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (5x6)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0059 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
22 V
Continuous Drain Current
65 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10881-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL65DN3LLH5
Manufacturer:
ST
Quantity:
15 000
Part Number:
STL65DN3LLH5
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
STL65DN3LLH5
Manufacturer:
ST
0
Part Number:
STL65DN3LLH5
0
Company:
Part Number:
STL65DN3LLH5
Quantity:
10 000
Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
C
GS(th)
DS(on)
C
Q
Q
DSS
GSS
R
Q
oss
rss
iss
gs
gd
G
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 18323 Rev 1
V
V
V
V
(see
f = 1 MHz open drain,
Bias=0
test signal level = 20 mV,
open drain
I
V
V
V
V
V
V
D
DS
GS
DD
GS
DS
DS
GS
DS
GS
GS
= 250 µA, V
=0
=15 V, I
= V
= 10 V, I
= 4.5 V, I
=25 V, f=1 MHz,
=4.5 V
= Max rating,
= Max rating @125 °C
= ± 22 V
Figure
Test conditions
Test conditions
GS
, I
D
D
14)
D
D
= 19 A
= 9.5 A
= 250 µA
= 9.5 A
GS
= 0
Min.
Min.
30
1
-
-
-
0.0059
0.0071
1500
Typ.
Typ.
230
1.5
4.4
1.6
23
12
5
STL65DN3LLH5
0.0065
0.0079
Max.
Max.
±
100
10
-
-
-
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω
Ω

Related parts for STL65DN3LLH5